• DocumentCode
    472928
  • Title

    An Aluminum Gate One Megabit DRAM

  • Author

    Gaworecki, J.M. ; Furst, R.C. ; Lewis, S.C.

  • Author_Institution
    IBM General Technology Division Essex Junction, VT. 05452
  • fYear
    1984
  • fDate
    10-12 Sept. 1984
  • Firstpage
    14
  • Lastpage
    15
  • Keywords
    Aluminum; Capacitors; Circuits; Content addressable storage; DRAM chips; MOS devices; Manufacturing processes; Random access memory; Semiconductor device manufacture; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1984. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    4-930813-08-5
  • Type

    conf

  • Filename
    4480677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472928