Title :
A Vertical Capacitor Cell for ULSI DRAM´s
Author :
Furuyama, Tohru ; Frey, Jeffrey
Author_Institution :
Semiconductor Device Engineering Lab. Toshiba Corp., Kawasaki 210, Japan
Keywords :
Doping; Insulation; MOS capacitors; MOSFET circuits; Random access memory; Semiconductor devices; Substrates; Ultra large scale integration; Voltage;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
