A Vertical Capacitor Cell for ULSI DRAM´s

Author

Furuyama, Tohru ; Frey, Jeffrey

Author_Institution

Semiconductor Device Engineering Lab. Toshiba Corp., Kawasaki 210, Japan

fYear

1984

fDate

10-12 Sept. 1984

Firstpage

Lastpage

Keywords

Doping; Insulation; MOS capacitors; MOSFET circuits; Random access memory; Semiconductor devices; Substrates; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1984. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Print_ISBN

4-930813-08-5

Type

Filename

4480678

Link To Document