Title :
High Capacitance Trench Structure (HI-CAT) for Megabit LSI
Author :
Satoh, S. ; Yoneda, M. ; Nagatomo, M. ; Fujishima, K. ; Yamazaki, T. ; Nakata, H.
Author_Institution :
LSI R & D Laboratory, Mitsubishi Electric Corp. Itami, Hyogo 664, Japan
Keywords :
Aluminum; Capacitance; Dielectric breakdown; Electrodes; Error analysis; Etching; Laboratories; Large scale integration; MOS capacitors; Substrates;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
