DocumentCode

472935

Title

Work Function Controlled Silicide Technology for Submicron CMOS

Author

Kakumu, Masakazu ; Hashimoto, Kazuhiko

Author_Institution

Semiconductor Device Engineering Laboratory Toshiba Corporation; Kawasaki Japan

fYear

1984

fDate

10-12 Sept. 1984

Firstpage

30

Lastpage

31

Keywords

CMOS process; CMOS technology; Degradation; Electrodes; Impurities; Ion implantation; MOS devices; MOSFET circuits; Silicides; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1984. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Print_ISBN

4-930813-08-5

Type

conf

Filename

4480684