Title :
High Performance Silicided Source/Drain CMOSFET Without Parasitic Effects
Author :
Kakumu, Masakazu ; Hashimoto, Kazuhiko
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation; Kawasaki Japan
Keywords :
CMOS process; CMOS technology; CMOSFETs; Contact resistance; Implants; Impurities; MOSFETs; Silicidation; Silicides; Very large scale integration;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
