• DocumentCode
    472940
  • Title

    Poly-Oxide/Nitride/Oxide Structures for Highly Reliable EPROM Cells

  • Author

    Mori, S. ; Sato, M. ; Mikata, Y. ; Yoshikawa, K. ; Yanase, T.

  • Author_Institution
    Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
  • fYear
    1984
  • fDate
    10-12 Sept. 1984
  • Firstpage
    40
  • Lastpage
    41
  • Keywords
    Capacitors; Conductive films; EPROM; Electrons; Insulation; Leakage current; Oxidation; Stress; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1984. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    4-930813-08-5
  • Type

    conf

  • Filename
    4480689