• DocumentCode
    472941
  • Title

    EEPROM Cell with HB (One Half Barrier Height) Oxide for VLSI

  • Author

    Nozawa, Hiroshi ; Matsukawa, Naohiro ; Morita, Shigeru ; Miyamoto, Jun-ichi ; Iizuka, Tetsuya

  • Author_Institution
    Semiconductor Device Engineering Laboratory, Toshiba Kawasaki, Japan
  • fYear
    1984
  • fDate
    10-12 Sept. 1984
  • Firstpage
    42
  • Lastpage
    43
  • Keywords
    Controllability; EPROM; Electrons; Laboratories; Semiconductor devices; Silicon; Tunneling; Very large scale integration; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1984. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    4-930813-08-5
  • Type

    conf

  • Filename
    4480690
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472941