DocumentCode
472943
Title
Bi-CMOS Circuits for High Performance VLSI
Author
Lee, S.C. ; Schucker, Douglas W. ; Hickman, Patrick T.
Author_Institution
Motorola, Inc. 2200 W. Broadway Road, Mesa, AZ 85202
fYear
1984
fDate
10-12 Sept. 1984
Firstpage
46
Lastpage
47
Abstract
A circuit technique combining CMOS and bipolar circuits to achieve high performance at low power has been demonstrated. The circuits have been fabricated and measurement results showed the performance is substantially better than CMOS. Applications of this technique to gate arrays and standard cell based VLSI are discussed.
Keywords
CMOS process; CMOS technology; Circuit noise; Circuit simulation; Degradation; Delay; Driver circuits; Inverters; Parasitic capacitance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Print_ISBN
4-930813-08-5
Type
conf
Filename
4480692
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