• DocumentCode
    472948
  • Title

    Disilane Photo-Epitaxy for VLSI

  • Author

    Yamazaki, T. ; Ito, T. ; Ishikawa, H.

  • Author_Institution
    Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, Japan 243-01
  • fYear
    1984
  • fDate
    10-12 Sept. 1984
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    The low-temperature photo-epitaxy technique has been developed using Si2H6 source gas. The Si2H6 gas is directly dissociated under UV light irradiation resulting in increase of growth rate. The epitaxial growth has been possible at a substrate temperature of 630°C. The nearly abrupt impurity profile is obtained which is advantageous for production of VLSI devices with small dimensions.
  • Keywords
    Epitaxial growth; Epitaxial layers; Hydrogen; Impurities; Indium tin oxide; Inductors; Silicon; Substrates; Temperature dependence; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1984. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    4-930813-08-5
  • Type

    conf

  • Filename
    4480697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472948