DocumentCode
472960
Title
Gate Current Injection in Submicron EPROM Cells
Author
Sato, Masaki ; Yoshikawa, Kuniyoshi ; Mori, Seiichi ; Kanzaki, Kohichi
Author_Institution
Semiconductor Device Engineering Laboratory Toshiba Corporation 1-Komukai toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
fYear
1984
fDate
10-12 Sept. 1984
Firstpage
82
Lastpage
83
Abstract
Hot electron generation is enhanced by controlling impurity profiles in deeper region from the surface. Reduction of gate oxide thickness, also increases the gate current even under the constant substrate current. It should be noted that the increase of deep channel concentration causes worse influence to long term instability in submicron MOSFET´s, therefore separately optimized peripheral devices were combined with EPROM cell. As a result, EPROM cell with 0.9 ¿m gate length, 180Ã… 1st gate oxide thickness and 2x1017 cm-3 deep boron concentration is designed and 100 ¿sec programming speed under 5V of drain voltage is successfully demonstrated.
Keywords
Boron; CMOS process; Current measurement; EPROM; Electrons; Hot carriers; Impurities; Length measurement; Magnetooptic recording; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Print_ISBN
4-930813-08-5
Type
conf
Filename
4480710
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