• DocumentCode
    472964
  • Title

    Integrated MOS Devices in Double Active Layers

  • Author

    Akasaka, Y. ; Kusunoki, S. ; Sugahara, K. ; Nishimura, T. ; Nakata, H.

  • Author_Institution
    LSI Research and Development Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, Japan
  • fYear
    1984
  • fDate
    10-12 Sept. 1984
  • Firstpage
    90
  • Lastpage
    91
  • Keywords
    Aluminum; Crystallization; Electric variables; Grain boundaries; Integrated circuit interconnections; Laser beams; MOS devices; MOSFETs; Power lasers; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1984. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    4-930813-08-5
  • Type

    conf

  • Filename
    4480714
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472964