DocumentCode :
472964
Title :
Integrated MOS Devices in Double Active Layers
Author :
Akasaka, Y. ; Kusunoki, S. ; Sugahara, K. ; Nishimura, T. ; Nakata, H.
Author_Institution :
LSI Research and Development Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, Japan
fYear :
1984
fDate :
10-12 Sept. 1984
Firstpage :
90
Lastpage :
91
Keywords :
Aluminum; Crystallization; Electric variables; Grain boundaries; Integrated circuit interconnections; Laser beams; MOS devices; MOSFETs; Power lasers; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
Type :
conf
Filename :
4480714
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472964
بازگشت