Wavelet based MOSFET switching loss analysis

Author

Kumar, Rajneesh ; Gupta, Karunesh K. ; Manjunath, H.V.

Author_Institution

EEE group BITS, Pilani

fYear

2007

fDate

3-6 Dec. 2007

Firstpage

672

Lastpage

676

Abstract

Switching loss calculation in MOSFET requires device parameters like turn-on and turn-off time, input and output capacitances, parasitic inductances and circuit parameters like voltage, current and operating frequency. Using these parameters switching loss is calculated with given approximate mathematical formulae. This paper presents a wavelet based method for switching loss calculation. It requires only the voltage and current waveforms during switching and calculates the power loss and also provides the frequency content during switching. The information regarding frequency content can be utilized for designing snubber as well as for EMI analysis. Multi Resolution Analysis (MRA) is used to decompose signals in wavelet domain and the signals are transformed in different frequency bands. The power is calculated in each band by multiplication of current and voltage wavelet coefficients. Simulation results are presented for a MOSFET with inductive load to support the method described.

Keywords

MOSFET; electromagnetic interference; snubbers; wavelet transforms; EMI analysis; MOSFET switching loss analysis; circuit parameters; inductive load; input capacitances; multiresolution analysis; output capacitances; parasitic inductances; turn-off time; turn-on time; wavelet based method; Electromagnetic interference; Frequency; Information analysis; MOSFET circuits; Multiresolution analysis; Parasitic capacitance; Snubbers; Switching loss; Voltage; Wavelet analysis; Multi Resolution Analysis; switching power loss; wavelets;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Engineering Conference, 2007. IPEC 2007. International

Conference_Location

Singapore

Print_ISBN

978-981-05-9423-7

Type

conf

Filename

4510111