DocumentCode
47350
Title
Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator
Author
Le Zhang ; Xuanyao Fong ; Chip-Hong Chang ; Zhi Hui Kong ; Roy, Kaushik
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
34
Issue
7
fYear
2015
fDate
Jul-15
Firstpage
1176
Lastpage
1187
Abstract
Memory-based physical unclonable functions (PUFs) have been studied and developed as powerful primitives to generate device-specific random keys, which can be used for various security applications. However, the existing memory-based PUFs need to safely buffer the data bits in the memory before it is used to produce random bits, resulting in additional area/energy consumption and potential data security issues. In this paper, we propose a new memory-based PUF that exploits the nonvolatility and random variability of emerging memory technologies to produce random bits. Unlike conventional implementations, the random bit generation process of our proposed PUF does not disturb the data bits already stored in the memory. To satisfy the quality requirements for both memory and PUF applications, we also propose a general method to find the optimal design point of emerging nonvolatile memory (eNVM)-based PUF. An illustrative design using spin-transfer torque magnetic RAM exhibits desirable results using our method. Compared to the conventional types of memory-based PUFs, eNVM-based PUFs features enhanced security as cryptographic primitives and lower area and energy cost as data storage.
Keywords
MRAM devices; cryptography; additional area-energy consumption; cryptographic primitive; data bit buffering; data storage; device-specific random keys; dual-mode application; eNVM-based PUF; emerging nonvolatile memory optimization; key generator; memory-based PUF; memory-based physical unclonable functions; nonvolatility; optimal design point; potential data security issue; quality requirement; random bit generation process; random variability; spin-transfer torque magnetic RAM; Buffer storage; Memory management; Nonvolatile memory; Random access memory; Reliability; Security; Switches; Emerging nonvolatile memories (eNVMs); Physical Unclonable Function; Spin-transfer torque MRAM; emerging nonvolatile memories; hardware security; physical unclonable function (PUF); spin-transfer torque magnetic RAM (STT-MRAM);
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2015.2427251
Filename
7097003
Link To Document