THz frequency range planar diodes based on GaAs/AlAs superlattices optimization

In the report results of optimization of the planar diodes based on GaAs/AlAs superlattices for use in devices of THz range of frequencies are considered. The purpose of optimization was reduction of value of series resistance of losses R_s and parasitic capacity C_par of a substrate of the diode. The R_k contains have been designed. It is found, that at the area of active region of the diode less 2times10^-8 sm², the maximal contribution to value of R_s gives resistance of the small area ohmic contact. For its reduction it was used the additional thin (100 nm) high-doped GaInAs contact layer located between ohmic contact and a superlattice. From measurements of full size of R_s for a massive from 100 diodes the value of the specific resistance of ohmic contact with an additional contact layer equal 2times10^-7 OM/sm² is received.