Broadband asymmetric quantum-well infrared photodetector in long-wavelength infrared range (LWIR)

Author

Hostut, M. ; Ergun, Y. ; Sokmen, I.

Author_Institution

Anadolu Univ. at Eskisehir, Eskisehir

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

134

Lastpage

136

Abstract

A theoretical investigation of a GaAs-AlGaAs infrared detector consisting of three asymmetric quantum wells is presented. Each quantum well is sensitive to yield absorption and a photoresponse at peak wavelengths of 8 mum, 9.5 mum and 10.8 mum respectively. Device operation is based on inter-subband bound-to-bound transition. Asymmetry in the quantum wells is shown to give broad band responsivity spectrum at an operating bias.

Keywords

aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; GaAs-AlGaAs; broadband asymmetric quantum-well infrared photodetector; intersubband bound-to-bound transition; long-wavelength infrared range; photoresponse; wavelength 10.8 mum; wavelength 8 mum; wavelength 9.5 mum; yield absorption; Dark current; Doping; Electromagnetic wave absorption; Electrons; Gallium arsenide; Infrared detectors; Photodetectors; Quantum well devices; Quantum wells; Wave functions; Infrared detectors; QWIP; intersubband; photodetectors; quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516427

Filename

4516427