DocumentCode :
473973
Title :
Infrared photoconductivity of Te donor in Ge
Author :
Nakata, H. ; Yokoyama, A. ; Imanaka, Y. ; Takehana, K. ; Takamasu, T.
Author_Institution :
Dept. of Arts & Sci., Osaka Kyoiku Univ., Kashiwara
fYear :
2007
fDate :
2-9 Sept. 2007
Firstpage :
232
Lastpage :
234
Abstract :
We observed infrared photoconductivity in Ge:Te below 30 K. The photoconductivity intensity has a threshold around 100 meV and the main peak at 220 meV. The activation energy estimated from temperature dependence of photoconductivity intensity is 1.2 meV, which is much smaller than the first ionization energy 90 meV of Te donor.
Keywords :
germanium; photoconductivity; tellurium; Ge; Te; activation energy; infrared photoconductivity; photoconductivity intensity; Photoconductivity; Tellurium; Ge; donor; infrared; photoconductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
Type :
conf
DOI :
10.1109/ICIMW.2007.4516475
Filename :
4516475
Link To Document :
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