• DocumentCode
    473973
  • Title

    Infrared photoconductivity of Te donor in Ge

  • Author

    Nakata, H. ; Yokoyama, A. ; Imanaka, Y. ; Takehana, K. ; Takamasu, T.

  • Author_Institution
    Dept. of Arts & Sci., Osaka Kyoiku Univ., Kashiwara
  • fYear
    2007
  • fDate
    2-9 Sept. 2007
  • Firstpage
    232
  • Lastpage
    234
  • Abstract
    We observed infrared photoconductivity in Ge:Te below 30 K. The photoconductivity intensity has a threshold around 100 meV and the main peak at 220 meV. The activation energy estimated from temperature dependence of photoconductivity intensity is 1.2 meV, which is much smaller than the first ionization energy 90 meV of Te donor.
  • Keywords
    germanium; photoconductivity; tellurium; Ge; Te; activation energy; infrared photoconductivity; photoconductivity intensity; Photoconductivity; Tellurium; Ge; donor; infrared; photoconductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1438-3
  • Type

    conf

  • DOI
    10.1109/ICIMW.2007.4516475
  • Filename
    4516475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=473973