DocumentCode
474056
Title
The modeling front contact metallization grid pattern for multi crystalline silicon solar cell
Author
Jalali, R. ; Faizabadi, E. ; Behafarid, F.
Author_Institution
K. N. Toosi Univ. of Technol., Tehran
fYear
2007
fDate
2-9 Sept. 2007
Firstpage
452
Lastpage
453
Abstract
The achievement of high efficiency in solar cells is depended upon minimizing parasitic losses. Some fraction of the power produced by the cell is necessarily lost by series resistance associated with the grid and by shadowing of them. There are several approaches to reduction these losses, such as choosing a more efficient pattern, optimizing line spacing, etc. The problem is further complicated by the need for dense coverage of the cell area with the grid pattern to reduce the power loss caused by the lateral voltage drop in the active layer, and they need to avoid grid patterns that are too fine and too resistive. In this paper we investigate a special design that minimize the power loss for 10 cm times 10 cm multi crystalline silicon solar cell based on the exact calculating of all kind of power losses including shadowing, contact, lateral and metallization for fingers and power losses due to metallization and shadowing for busbars. We achieved a method for exact calculation of metallization power loss for the current which increased at every node and depends on the number of wires which are parallel to the busbar. We find that the efficiency of this cell is below that of a cell with standard pattern and it is low cost manufacture too.
Keywords
metallisation; solar cells; front contact metallization grid pattern; metallization power loss; multicrystalline silicon solar cell; parasitic losses; series resistance; Costs; Crystallization; Fingers; Manufacturing; Metallization; Photovoltaic cells; Shadow mapping; Silicon; Voltage; Wires; contact metallization; grid pattern; parasitic losses; silicon solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1438-3
Type
conf
DOI
10.1109/ICIMW.2007.4516577
Filename
4516577
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