Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements

Author

Shimada, K. ; Terai, Y. ; Takemoto, S. ; Suzuki, M. ; Tonouchi, M. ; Fujiwara, Y.

Author_Institution

Div. of Mater. & Manuf. Sci., Osaka Univ., Suita

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

486

Lastpage

487

Abstract

Transient carrier dynamics in Er,O-codoped GaAs (GaAs:Er,O) have been investigated by terahertz (THz) emission from the sample surface. The THz radiation from GaAs:Er,O was observed under 800 nm optical excitation and depended on Er concentration. The radiated THz amplitude decreased and the decay time of transient photocurrent became long as the Er concentration was increased. GaAs:Er,O with the highest Er concentration of 8.7times10¹⁸ cm^-3 showed the decay time of 0.86 ps which was longer than that of 0.37 ps in an undoped GaAs epitaxial layer. These results were understood by electron scattering due to the codoping of Er and O.

Keywords

III-V semiconductors; gallium arsenide; semiconductor doping; submillimetre wave measurement; THz radiation; optical excitation; time-resolved terahertz emission measurements; transient carrier dynamics; Epitaxial layers; Erbium; Gallium arsenide; Optical pulses; Optical pumping; Optical scattering; Optical surface waves; Stimulated emission; Submillimeter wave measurements; Ultrafast optics; GaAs:Er,O; rare-earth; terahertz radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516594

Filename

4516594