NEP and responsivity of THz zero-bias Schottky diode detectors

Schottky barrier diodes can be used as direct detectors throughout the millimeter- and submillimeter- wave bands. When the diodes are optimized to have a low forward turn-on voltage, the detectors can achieve excellent frequency response and bandwidth, even with zero-bias. This paper reports on the characterization of VDI´s zero- bias Schottky detectors. Responsivity typically ranges from 4,000 V/W at 100 GHz to 400 V/W at 900 GHz and each detector achieves good responsivity across the entire single- moded bandwidth of the input rectangular waveguide. Under low power operation the detectors ach.ieve a measured noise-equivalent-power (NEP) of about 1.5 x 10^-12 W/radicHz.