Characterisation of Sol-Gel Hybrid Thin Films for Switching Devices

Author

Dima, A. ; Rendina, I. ; Corte, F. Della ; Dima, M.

Author_Institution

Dept. of Eng., Univ. of Liverpool, Liverpool

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

115

Lastpage

118

Abstract

Development of non-volatile memories based on organic soft materials is a strong industrial niche for flash-memories. The electrical bistability of such materials makes them ideal candidates for fast programmable logic elements, produced on a cost-effective basis. SiO₂-Rose Bengal (bis-triethylammonium) hybrid thin films are reported for the first time together with their characterizations. The films are well reproducible and display good I-V switching characteristics. The physical and chemical stability of the hybrids makes them suitable for standard silicon-industry processes, streamlining and rendering their production cost-effective.

Keywords

flash memories; programmable logic devices; sol-gel processing; thin film devices; I-V switching; SiO₂-Rose Bengal hybrid thin films; bis-triethylammonium; chemical stability; electrical bistability; flash memory; nonvolatile memories; organic soft materials; programmable logic elements; silicon industry; sol-gel hybrid thin film; switching devices; Chemical elements; Chemical processes; Displays; Logic devices; Nonvolatile memory; Organic materials; Programmable logic arrays; Programmable logic devices; Thin film devices; Transistors; Flash-Memories; Rose-Bengal; Sol-Gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519660

Filename

4519660