Title :
Comparative Characterization of PbS Macro- And Nano-Crystalline Photoresistive Detectors
Author :
Iordache, G. ; Buda, M. ; Stancu, V. ; Botila, T.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
A comparative study of photodetector performance for nano- and micro-crystalline PbS thin layers is presented. Both types of PbS films were obtained using the Chemical Bath Deposition method. To prepare nano-crystalline thin films we used a short reaction time with no doping Bi added. At low levels of irradiance (0.1 m W/cm2) and room temperature (RT), the macro-crystalline PbS outperforms its nano- crystalline counterpart, by a factor of 6 for the value of DeltaR/Rdark However the nano-crystalline photodetectors show significantly lower optical quenching for large values of irradiance (ap 500 mW/cm2) at RT and better DeltaR/Rdark performance at lower temperature, with an optimum temperature of 150 K. The low frequency noise behavior is a superposition of 1/f flicker noise at low frequency and generation-recombination and thermal noise at higher frequency. The proportionality factor between the 1/f noise and the DC dark current for the series resistor is 1.5 times larger for the nano-crystalline photodetector at room temperature.
Keywords :
IV-VI semiconductors; crystal microstructure; dark conductivity; lead compounds; nanostructured materials; photodetectors; photoresistors; radiation quenching; semiconductor thin films; DC dark current; PbS; chemical bath deposition; generation-recombination; macrocrystalline photoresistive detector; nanocrystalline photoresistive detector; optical quenching; photodetector; resistor; temperature 293 K to 298 K; thermal noise; thin films; 1f noise; Bismuth; Chemicals; Detectors; Doping; Frequency; Low-frequency noise; Photodetectors; Temperature; Transistors; Heterostructures; Nano-crystalline PbS; Optoelectronics;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519680