Title :
Structural and Electro-Optical Properties of ZnO Thin Films
Author :
Iacomi, Felicia ; Baban, C. ; Apetrei, R. ; Luca, D.
Author_Institution :
Fac. of Phys., Al.I. Cuza Univ., Iasi
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
ZnO thin films were grown on different substrates (glass, quartz, silicon wafers, etc) by vacuum thermal evaporation. Different thermal treatments were performed in order to obtain transparent and conductive or high resistive ZnO thin films. The electrical properties of ZnO thin films are dependent on the crucible temperature, annealing conditions and on the substrate nature. The thin films are transparent and have an electrical resistivity in 10-4- 10-1 Omegam region. The annealing process performed in vacuum at 573 K or under UV irradiation determines a decrease in the electrical resistivity of films.
Keywords :
II-VI semiconductors; annealing; electrical resistivity; electro-optical effects; semiconductor thin films; wide band gap semiconductors; zinc compounds; UV irradiation; annealing conditions; crucible temperature; electrooptical properties; film electrical resistivity; thermal treatments; thin films; vacuum thermal evaporation; Annealing; Conductive films; Electric resistance; Glass; Semiconductor thin films; Silicon; Thermal conductivity; Thermal resistance; Transistors; Zinc oxide; Electrical properties; Structure; Thin films; Zinc oxide;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519686
