Structural and Electro-Optical Properties of ZnO Thin Films

Author

Iacomi, Felicia ; Baban, C. ; Apetrei, R. ; Luca, D.

Author_Institution

Fac. of Phys., Al.I. Cuza Univ., Iasi

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

223

Lastpage

226

Abstract

ZnO thin films were grown on different substrates (glass, quartz, silicon wafers, etc) by vacuum thermal evaporation. Different thermal treatments were performed in order to obtain transparent and conductive or high resistive ZnO thin films. The electrical properties of ZnO thin films are dependent on the crucible temperature, annealing conditions and on the substrate nature. The thin films are transparent and have an electrical resistivity in 10^-4- 10^-1 Omegam region. The annealing process performed in vacuum at 573 K or under UV irradiation determines a decrease in the electrical resistivity of films.

Keywords

II-VI semiconductors; annealing; electrical resistivity; electro-optical effects; semiconductor thin films; wide band gap semiconductors; zinc compounds; UV irradiation; annealing conditions; crucible temperature; electrooptical properties; film electrical resistivity; thermal treatments; thin films; vacuum thermal evaporation; Annealing; Conductive films; Electric resistance; Glass; Semiconductor thin films; Silicon; Thermal conductivity; Thermal resistance; Transistors; Zinc oxide; Electrical properties; Structure; Thin films; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519686

Filename

4519686