Middle-IR Random lasing of Cr:ZnS nanocrystalline powder - from diffusion to photon localization regimes

Author

Martyshkin, D.V. ; Kim, C. ; Moskalev, I.S. ; Fedorov, V.V. ; Mirov, S.B.

Author_Institution

Dept. of Phys., Univ. of Alabama at Birmingham, Birmingham, AL

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

First room temperature mid-IR lasing due to intra-shell transitions in the doped semiconductor nanocrystals (NC) is reported. The 27 nm Cr:ZnS NCs oscillate at 2200 nm with 325 mJ/cm² laser threshold. Temperature dependence of photoluminescence decay, lasing threshold and lasing wavelength maxima of Cr:ZnS NCs are studied.

Keywords

II-VI semiconductors; chromium; diffusion; nanoparticles; photoluminescence; zinc compounds; Cr:ZnS NC; Cr:ZnS nanocrystalline powder; ZnS:Cr; diffusion; intra-shell transitions; middle-IR random lasing; photoluminescence decay; photon localization regimes; semiconductor nanocrystals; temperature dependence; wavelength 2200 nm; Grain size; Laser ablation; Laser feedback; Laser transitions; Optical feedback; Optical pumping; Optical scattering; Powders; Semiconductor lasers; Zinc compounds; (160.2540) Fluorescent and luminescent materials; (300.6470) Spectroscopy, semiconductors;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572678