Title :
Interaction and cooling of the indirect excitons in elevated traps
Author :
High, A.A. ; Hammack, A.T. ; Butov, L.V. ; Mouchliadis, L. ; Ivanov, A.L. ; Hanson, M. ; Gossard, A.C.
Author_Institution :
Dept. of Phys., Univ. of California at San Diego, La Jolla, CA
Abstract :
We present studies of 2D indirect excitons in an in-plane trap created by a laterally modulated gate voltage. Our data indicates an effective evaporative cooling of excitons in the elevated trap regime. We also observed narrow PL lines which correspond to the emission of localized and delocalized states of the indirect excitons in the trap. The homogeneous line broadening due to interaction increases with density and dominates the linewidth of the indirect exciton emission at high densities.
Keywords :
excitons; photoluminescence; semiconductor quantum wells; 2D indirect excitons; delocalized states; elevated traps; evaporative cooling; homogeneous line broadening; in-plane trap; laterally modulated gate voltage; narrow PL lines; Astronomy; Charge carrier processes; Cooling; Excitons; Optical scattering; Particle scattering; Physics; Spectroscopy; Temperature; Voltage; (300.6470) Spectroscopy, semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
