DocumentCode :
474812
Title :
Ultrafast photoinduced ferromagnetic phase enhancement in ion implanted GaMnAs
Author :
Cotoros, Ingrid ; Wang, Jigang ; Stone, Peter ; Dubon, Oscar ; Chemla, Daniel
Author_Institution :
Dept. of Phys., Univ. of California at Berkeley, Berkeley, CA
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
We report on the dramatic ultrafast photo-enhancement of ferromagnetism on a 100 picosecond timescale in ion-implanted semiconductor GaMnAs via photoexcited transient carriers. This non-thermal, transient cooperative magnetic process surprisingly quenches at low temperatures, significantly bellow the Curie temperature.
Keywords :
ferromagnetic materials; gallium compounds; ion implantation; magnetic semiconductors; photoexcitation; Curie temperature; GaMnAs; ferromagnetic phase enhancement; ferromagnetism; ion implanted GaMnAs; photoexcited transient carriers; semiconductor GaMnAs; time 100 ps; transient cooperative magnetic process; ultrafast photo-enhancement; Bellows; Demagnetization; Magnetic confinement; Magnetic field measurement; Magnetic materials; Magnetic semiconductors; Magnetization; Molecular beam epitaxial growth; Semiconductor materials; Temperature dependence; 160.6990) Transition-metal-doped materials; 320.7130) Ultrafast processes in condensed matter, including semiconductors;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4572858
Link To Document :
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