Title :
Stimulated radiation of optically pumped CdxHg1−xTe structures at room temperature
Author :
Andronov, A.A. ; Nozdrin, Yu.N. ; Okomel´kov, A.V. ; Babenko, A.A. ; Varavin, V.S. ; Ikusov, D.G. ; Smirnov, R.N.
Author_Institution :
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod
Abstract :
The experimental observation of stimulated radiation of optically pumped CdxHg1-xTe structures in the wavelength range of 1.4 - 4.5 mum is reported. In the experiments, graded-gap CdxHg1-xTe samples grown on GaAs and Si substrates by molecular beam epitaxy were used. Superluminescence of such structures was observed at 77 - 300 K under the pulsed pumping of the samples by a Nd:YAG laser at a wavelength of 1.064 mum. At room temperature, stimulated radiation was observed at wavelength of 1.4 - 1.7 mum. The obtained experimental data are the first results on the observation of stimulated radiation from graded-gap CdxHg1-xTe structures on Si and GaAs substrates at these wavelengths at room temperature.
Keywords :
II-VI semiconductors; cadmium compounds; molecular beam epitaxial growth; optical materials; optical pumping; stimulated emission; superradiance; wide band gap semiconductors; CdxHg1-xTe structures; CdHgTe; GaAs; Si; YAG:Nd; molecular beam epitaxy; stimulated radiation; superluminescence; temperature 293 K to 298 K; wavelength 1.4 mum to 4.5 mum; Gallium arsenide; Laser excitation; Mercury (metals); Molecular beam epitaxial growth; Optical pulses; Optical pumping; Stimulated emission; Substrates; Tellurium; Temperature;
Conference_Titel :
Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-2625-6
Electronic_ISBN :
978-1-4244-2626-3
DOI :
10.1109/ICTON.2008.4598416