DocumentCode :
475204
Title :
InP-based two dimensional photonic crystals - A material and processing perspective
Author :
Anand, S. ; Berrier, A.
Author_Institution :
Dept. of Microelectron. & Appl. Phys., R. Inst. of Technol., Kista
Volume :
2
fYear :
2008
fDate :
22-26 June 2008
Firstpage :
25
Lastpage :
25
Abstract :
The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall surface potential will be demonstrated.
Keywords :
III-V semiconductors; carrier lifetime; etching; indium compounds; photonic crystals; semiconductor quantum wells; surface potential; InP; carrier lifetimes; carrier transport; emitter applications; feature-size dependent etching; high aspect ratio etching; optical properties; quantum wells; side-wall damage; surface potential; switching applications; two dimensional photonic crystals; Charge carrier lifetime; Crystalline materials; Etching; Microelectronics; Optical device fabrication; Optical materials; Photonic crystals; Physics; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-2625-6
Electronic_ISBN :
978-1-4244-2626-3
Type :
conf
DOI :
10.1109/ICTON.2008.4598579
Filename :
4598579
Link To Document :
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