Phenomena of electrical memory effects on the device level and their relations

Author

Chalermwisutkul, S.

Author_Institution

Sirindhorn Int. Thai-German Grad. Sch. of Eng., King Mongkut´´s Univ. of Technol. North Bangkok, Bangkok

Volume

1

fYear

2008

fDate

14-17 May 2008

Firstpage

229

Lastpage

232

Abstract

Whereas the requirements of communication systems become more stringent, the impacts of memory effects on linearity and efficiency become more noticeable. Memory effects in a communication system arise from several sources. In power amplifier circuits, memory effects are caused by DC supply voltage circuits, matching networks and power devices (transistors). Memory effects of power devices are required to be described accurately by the device model, since these effects can have significant impacts on output power, efficiency and linearity of the circuit. In this paper, different phenomena of device-level memory effects and their relations will be discussed.

Keywords

network synthesis; semiconductor devices; communication system; device level; electrical memory effects; power devices; Circuits; Current measurement; Delay effects; Linearity; Power amplifiers; Power generation; Pulse measurements; Shape; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on

Conference_Location

Krabi

Print_ISBN

978-1-4244-2101-5

Electronic_ISBN

978-1-4244-2102-2

Type

conf

DOI

10.1109/ECTICON.2008.4600414

Filename

4600414