Title :
Phenomena of electrical memory effects on the device level and their relations
Author :
Chalermwisutkul, S.
Author_Institution :
Sirindhorn Int. Thai-German Grad. Sch. of Eng., King Mongkut´´s Univ. of Technol. North Bangkok, Bangkok
Abstract :
Whereas the requirements of communication systems become more stringent, the impacts of memory effects on linearity and efficiency become more noticeable. Memory effects in a communication system arise from several sources. In power amplifier circuits, memory effects are caused by DC supply voltage circuits, matching networks and power devices (transistors). Memory effects of power devices are required to be described accurately by the device model, since these effects can have significant impacts on output power, efficiency and linearity of the circuit. In this paper, different phenomena of device-level memory effects and their relations will be discussed.
Keywords :
network synthesis; semiconductor devices; communication system; device level; electrical memory effects; power devices; Circuits; Current measurement; Delay effects; Linearity; Power amplifiers; Power generation; Pulse measurements; Shape; Thermal conductivity; Voltage;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on
Conference_Location :
Krabi
Print_ISBN :
978-1-4244-2101-5
Electronic_ISBN :
978-1-4244-2102-2
DOI :
10.1109/ECTICON.2008.4600414
