Development of multi-gate mosfet models for circuit simulation with a compact modeling platform

Author

Mattausch, H.J. ; Chan, M. ; He, J. ; Koike, H. ; Miura-Mattausch, M. ; Nakagawa, T. ; Park, Y.J. ; Tsutsumi, T. ; Yu, Z.

Author_Institution

Hiroshima University, JAPAN

fYear

2008

fDate

19-21 June 2008

Firstpage

59

Lastpage

64

Abstract

Research is reported that aims at a framework for efficient development of multi-gate MOSFET models for circuit simulation and is carried out in an international collaboration among different research teams. A common platform for compact-model development, based on the Verilog-A language, is also constructed to verify as well as to efficiently merge the individual contributions from each collaborator into the final completed compact model.

Keywords

Application specific integrated circuits; Circuit simulation; Fabrication; Hardware design languages; Integrated circuit modeling; Integrated circuit synthesis; Integrated circuit technology; International collaboration; MOSFET circuits; Prototypes; Circuit simulation; Compact model; Modular platform; Multi-gate MOSFET; Quantum effect; Surface potential; Verilog-A; Volume inversion;

fLanguage

English

Publisher

iet

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on

Conference_Location

Poznan, Poland

Print_ISBN

978-83-922632-7-2

Electronic_ISBN

978-83-922632-8-9

Type

conf

Filename

4600856