Electrical characterization of FinFETS

A methodology of FinFETs characterization based on electrical characteristics of FinFET devices have has been proposed. The measured channel and gate current vs voltage characteristics of sets of devices with different fin width have been used for evaluation of the FinFETs parameters. Namely, a channel current data have been used for estimation of threshold voltage, transconductance coefficient, effective fin width, subthreshold slope and degradation of effective mobility. Top and side components of gate current have been extracted. The results have been illustrated by numerical simulations. Finally, future works on FinFETs characterization have been proposed.