Predict the characteristics of a terahertz photomixer based on HEMT with the cap region from the analyitcal theory

Author

Chen, Y. ; He, J. ; Mou, X. ; Wei, Y. ; Lou, H. ; Liu, C. ; Lin, X. ; Zhang, X.

Author_Institution

Peking University Shenzhen Graduate School, CHINA

fYear

2008

fDate

19-21 June 2008

Firstpage

431

Lastpage

436

Abstract

The characteristics of a terahertz photomixer using the excitation of plasma oscillation in the channel of a high-electron mobility transistor (HEMT) with the cap region are predicted in this paper from the developed analytic model. In the proposed model, the photo beam is inputted to the absorption layer of HEMT through the ungated area. Starting from the Euler equation and continuity equation, we obtained a response expression depicting the terahertz characteristics of that HEMT photomixer. As a result, the response as a function of the signal frequency is analyzed and the dependence of resonant frequency and amplitude on different length of cap region, voltage, and physical parameters are demonstrated.

Keywords

Absorption; Charge carrier processes; Electron optics; Equations; Frequency; HEMTs; MODFETs; Optical beams; Plasma properties; Predictive models; HEMT; Terahertz photomixer; analytical model; plasma excitation; two dimensional gas (2DEG);

fLanguage

English

Publisher

iet

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on

Conference_Location

Poznan, Poland

Print_ISBN

978-83-922632-7-2

Electronic_ISBN

978-83-922632-8-9

Type

conf

Filename

4600952