Technology of SOI monolithic active pixel detectors for improvement of I-V characteristics and reliability

Author

Niemiec, H. ; Kucewicz, W. ; Sapor, M. ; Grabiec, P. ; Kucharski, K. ; Marczewski, J. ; Tomaszewski, D. ; Armstrong, B.M. ; Bain, M. ; Baine, P. ; Gamble, H.S. ; Suder, S.L. ; Ruddell, F.H.

Author_Institution

AGH University of Science and Technology, POLAND

fYear

2008

fDate

19-21 June 2008

Firstpage

463

Lastpage

465

Abstract

Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.

Keywords

Current-voltage characteristics; Ionizing radiation; Ionizing radiation sensors; Leakage current; Paper technology; Radiation detectors; Readout electronics; Sensor phenomena and characterization; Silicon on insulator technology; Silicon radiation detectors; Monolithic active pixel sensors; Silicon detectors; Silicon on Insulator (SOI) technology;

fLanguage

English

Publisher

iet

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on

Conference_Location

Poznan, Poland

Print_ISBN

978-83-922632-7-2

Electronic_ISBN

978-83-922632-8-9

Type

conf

Filename

4600960