Title :
Technology of SOI monolithic active pixel detectors for improvement of I-V characteristics and reliability
Author :
Niemiec, H. ; Kucewicz, W. ; Sapor, M. ; Grabiec, P. ; Kucharski, K. ; Marczewski, J. ; Tomaszewski, D. ; Armstrong, B.M. ; Bain, M. ; Baine, P. ; Gamble, H.S. ; Suder, S.L. ; Ruddell, F.H.
Author_Institution :
AGH University of Science and Technology, POLAND
Abstract :
Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.
Keywords :
Current-voltage characteristics; Ionizing radiation; Ionizing radiation sensors; Leakage current; Paper technology; Radiation detectors; Readout electronics; Sensor phenomena and characterization; Silicon on insulator technology; Silicon radiation detectors; Monolithic active pixel sensors; Silicon detectors; Silicon on Insulator (SOI) technology;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on
Conference_Location :
Poznan, Poland
Print_ISBN :
978-83-922632-7-2
Electronic_ISBN :
978-83-922632-8-9
