• DocumentCode
    476559
  • Title

    GaN technology for microwave applications

  • Author

    Delage, Sylvain L. ; diForte-Poisson, M.-A. ; Morvan, E. ; Chartier, E. ; Laurent, M. ; Aubry, R. ; Bernard, S. ; Lancereau, D. ; Piotrowicz, S. ; Grimbert, B. ; Gaquière, C. ; Dambrine, G. ; de Jaeger, J.-C.

  • Author_Institution
    Alcatel-Thales III-V Lab., Marcoussis
  • fYear
    2008
  • fDate
    19-21 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle. This paper will present the status of current AlGaN/GaN technology.
  • Keywords
    aluminium compounds; gallium compounds; microwave devices; AlGaN-GaN; end-users; microwave applications; Aluminum gallium nitride; Frequency; Gallium nitride; Heterojunctions; Lattices; Microwave devices; Microwave technology; Silicon carbide; Substrates; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
  • Conference_Location
    Wroclaw
  • Print_ISBN
    978-83-906662-8-0
  • Type

    conf

  • Filename
    4630213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=476559