• DocumentCode
    476574
  • Title

    Analysis of quasi-static assumption in nonlinear FinFET model

  • Author

    Crupi, G. ; Caddemi, A. ; Schreurs, D. ; Homayouni, M. ; Angelov, I. ; Parvais, B.

  • Author_Institution
    DFMTFA, Messina Univ., Messina
  • fYear
    2008
  • fDate
    19-21 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.
  • Keywords
    MOSFET; microwave circuits; device geometries; intrinsic admittance parameters; model simulations; nonlinear FinFET model; quasistatic nonlinear microwave model; Admittance; Cutoff frequency; FinFETs; Frequency measurement; Microwave FETs; Microwave devices; Microwave measurements; Signal analysis; Solid modeling; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
  • Conference_Location
    Wroclaw
  • Print_ISBN
    978-83-906662-8-0
  • Type

    conf

  • Filename
    4630229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=476574