DocumentCode
476580
Title
0.8–4 GHz high efficiency power amplifier in GaN technology
Author
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Piazzon, L.
Author_Institution
E.E. Dep., Univ. of Roma Tor Vergata, Rome
fYear
2008
fDate
19-21 May 2008
Firstpage
1
Lastpage
4
Abstract
In this contribution, the design and full characterisation of a high efficiency ultra-wide-band power amplifier are presented. The amplifier, based on GaN technology device, has been designed using a CAD oriented broad band matching approach for both input and output networks. The continuous wave measurements results in an average drain efficiency around 50% from 0.8 GHz to 4 GHz with an output power higher than 32 dBm in the overall bandwidth.
Keywords
HEMT circuits; III-V semiconductors; UHF power amplifiers; gallium compounds; microwave power amplifiers; ultra wideband technology; wide band gap semiconductors; CAD oriented broad band matching approach; GaN; HEMT; UWB power amplifier; average drain efficiency; frequency 0.8 GHz to 4 GHz; high efficiency power amplifier; ultra wideband power amplifier; Bandwidth; Fabrication; Gallium nitride; HEMTs; High power amplifiers; Lithography; Power amplifiers; Power generation; Pulse measurements; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location
Wroclaw
Print_ISBN
978-83-906662-8-0
Type
conf
Filename
4630235
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