DocumentCode :
477167
Title :
Extraction parameters method to get a dual gate MOSFET macromodel
Author :
Zola, Julio Guillermo ; Kelly, Juan Miguel ; Glas, Gregorio Oscar
Author_Institution :
Electron. Dept., Univ. of Buenos Aires, Buenos Aires
fYear :
2008
fDate :
18-19 Sept. 2008
Firstpage :
1
Lastpage :
5
Abstract :
A simple extraction parameters method (EPM) based on datasheets values to build a dual gate MOSFET (DGM) macromodel to be used on PSpice, is explained. The model obtained for each DGM under test fits approximately its characteristics curves and real parameters values. The extracted values can be validated or improved either by calibration measurements or simulation models responses. Finally, a comparison between the proposed macromodel, current models and real responses are shown.
Keywords :
MOSFET; SPICE; semiconductor device models; PSpice; calibration measurements; dual gate MOSFET macromodel; extraction parameters method; Admittance; Calibration; Capacitance; Data engineering; Electronic circuits; Frequency; Laboratories; MOSFET circuits; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications, 2008. EAMTA 2008. Argentine School of
Conference_Location :
Buenos Aires
Print_ISBN :
978-987-655-003-1
Electronic_ISBN :
978-987-655-003-1
Type :
conf
Filename :
4638967
Link To Document :
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