Fabrication process design for complementary metal-cytop-organic-semiconductor integrated circuits

We report on design flows for the fabrication process of n and p type organic transistors onto a single substrate that allows for the integration of integrated circuits. Our fabrication process employs Cytop as the gate dielectric and four different combinations of organic semiconductors. Two p type organic semiconductors were used, Pentacene and alpha-sexithiophene and two n type semiconductors were used, F₁₅NTCDI (bis(pentadecafluorooctyl) naphthalenetetracarboxylic diimide) and F₁₆CuPc (Hexadecafluorocopper phthalocyanine). Combining both p and n type organic semiconductors onto a single, interconnected substrate allows for CMOS digital circuits. Through use of a silicon insulating substrating, individual transistors with separate contacts for gate, drain and source can be fabricated allowing for the development of hybrid silicon/organic integrated circuits. Experimental results from fabricated devices and simple circuits are reported.