Title :
Repetitive pulsed power based on semiconductor switching devices
Author :
Jiang, W. ; Oshima, N. ; Yokoo, T. ; Nakahiro, K. ; Honma, H. ; Takayama, K. ; Wake, M. ; Shimizu, N.
Author_Institution :
Nagaoka University of Technology, Niigata 940-2188, Japan
Abstract :
Static induction thyristor and silicon-carbide junction FET have been studied for applications to high-voltage modulators that are demanded by a new type of high-energy particle accelerator, the induction synchrotron. The switching characteristics of these power semiconductor devices are evaluated in order to assess their applicability to MHz level repetitive operation.
Keywords :
Circuit testing; FETs; Linear particle accelerator; Power semiconductor devices; Power semiconductor switches; Semiconductor devices; Synchrotrons; Temperature; Thyristors; Voltage;
Conference_Titel :
Pulsed Power Conference, 2007 16th IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-0913-6
Electronic_ISBN :
978-1-4244-0914-3
DOI :
10.1109/PPPS.2007.4651902
