Title :
Tin-fueled high-repetition-rate Z-pinch EUV source for semiconductor lithography
Author :
Teramoto, Y. ; Narihiro, Z. ; Yamatani, D. ; Yokoyama, T. ; Hosokai, T. ; Niimi, G. ; Bessho, K. ; Joshima, Y. ; Shirai, T. ; Mouri, S. ; Inoue, T. ; Mizokoshi, H. ; Yabuta, H. ; Paul, K.C. ; Takemura, T. ; Yokota, T. ; Kabuki, K. ; Miyauchi, K. ; Hotta,
Author_Institution :
Extreme Ultraviolet Lithography System Development Association, 1-90 Komakado, Gotenba, Shizuoka 412-0038, Japan
Abstract :
Gas-discharge Z-pinch plasma was researched for the sake of EUV source development for semiconductor lithography. A low-inductance, high-repetition-rate magnetic pulsed compression generator was coupled with a discharge electrode. In order to fulfill the requirements from the semiconductor lithography exposure tool, up to 8 kHz of discharge repetition frequency was tested with 15 J/pulse of energy storage. In addition to the improvement of electrical energy input, it is necessary to increase conversion efficiency (CE) from electrical to in-band (within 2 % bandwidth around λ=13.5 nm) radiation energy. Therefore tin hydride gas (SnH4) was utilized in this research. Radiation characteristics were investigated through the radiation measurements. In-band radiation power reached 700 W/2πsr/2%BW at 8 kHz, with plasma size of φ0.75×L4.6 mm and CE of 1.2 %.
Keywords :
Couplings; Electrodes; Fault location; Frequency; Lithography; Magnetic semiconductors; Plasma measurements; Plasma sources; Pulse compression methods; Pulse generation;
Conference_Titel :
Pulsed Power Conference, 2007 16th IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-0913-6
Electronic_ISBN :
978-1-4244-0914-3
DOI :
10.1109/PPPS.2007.4651986
