• DocumentCode
    477637
  • Title

    Milliwatt THz average output power from a photoconductive switch

  • Author

    Brown, E.R.

  • Author_Institution
    Univ. of California, Santa Barbara, CA
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the design and measurement details of a new GaAs-based THz photoconductive switch with an average power level in excess of 1 mW and peak power up to 33 W when pumped by a 780-nm, subpicosecond pulse train from a frequency-doubled 1.55-nm fiber mode-locked laser. The power was measured with a thermopile detector calibrated for THz operation and having very high saturation level. The median power frequency of the present photoconductive switch is estimated to be 400 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; photoconducting switches; GaAs; frequency-doubled 1.55-nm fiber mode-locked laser; photoconductive switch; subpicosecond pulse train; thermopile detector; Frequency estimation; Frequency measurement; Laser excitation; Optical design; Optical pulses; Photoconductivity; Power generation; Power measurement; Pulse measurements; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665475
  • Filename
    4665475