DocumentCode
477637
Title
Milliwatt THz average output power from a photoconductive switch
Author
Brown, E.R.
Author_Institution
Univ. of California, Santa Barbara, CA
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
We report the design and measurement details of a new GaAs-based THz photoconductive switch with an average power level in excess of 1 mW and peak power up to 33 W when pumped by a 780-nm, subpicosecond pulse train from a frequency-doubled 1.55-nm fiber mode-locked laser. The power was measured with a thermopile detector calibrated for THz operation and having very high saturation level. The median power frequency of the present photoconductive switch is estimated to be 400 GHz.
Keywords
III-V semiconductors; gallium arsenide; photoconducting switches; GaAs; frequency-doubled 1.55-nm fiber mode-locked laser; photoconductive switch; subpicosecond pulse train; thermopile detector; Frequency estimation; Frequency measurement; Laser excitation; Optical design; Optical pulses; Photoconductivity; Power generation; Power measurement; Pulse measurements; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665475
Filename
4665475
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