DocumentCode :
477637
Title :
Milliwatt THz average output power from a photoconductive switch
Author :
Brown, E.R.
Author_Institution :
Univ. of California, Santa Barbara, CA
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
We report the design and measurement details of a new GaAs-based THz photoconductive switch with an average power level in excess of 1 mW and peak power up to 33 W when pumped by a 780-nm, subpicosecond pulse train from a frequency-doubled 1.55-nm fiber mode-locked laser. The power was measured with a thermopile detector calibrated for THz operation and having very high saturation level. The median power frequency of the present photoconductive switch is estimated to be 400 GHz.
Keywords :
III-V semiconductors; gallium arsenide; photoconducting switches; GaAs; frequency-doubled 1.55-nm fiber mode-locked laser; photoconductive switch; subpicosecond pulse train; thermopile detector; Frequency estimation; Frequency measurement; Laser excitation; Optical design; Optical pulses; Photoconductivity; Power generation; Power measurement; Pulse measurements; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665475
Filename :
4665475
Link To Document :
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