Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers

Author

Altet, Josep ; Mateo, D. ; Gomez, David ; Gonzalez Jimenez, Jose Luis ; Martineau, Baudouin ; Siligaris, Alexandre ; Aragones, X.

Author_Institution

Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain

Volume

24

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

272

Lastpage

274

Abstract

This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.

Keywords

built-in self test; circuit testing; cost reduction; elemental semiconductors; frequency measurement; millimetre wave power amplifiers; silicon; temperature measurement; temperature sensors; PA; Si; bandwidth 60 GHz; central frequency measurement; cost reduction testing; functional built-in tester; gain 3 dB; low frequency temperature measurement; mmw power amplifier; on-chip measurement technique; self-healing strategy; temperature sensor; Bandwidth; Frequency measurement; Gain; Monitoring; Radio frequency; Temperature measurement; Temperature sensors; Built-in test; CMOS millimeter wave integrated circuits; design for testability; frequency response; temperature measurement;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2293668

Filename

6701395