DocumentCode
47923
Title
350 mV, 5 GHz Class-D Enhanced Swing Differential and Quadrature VCOs in 65 nm CMOS
Author
Guha Roy, Ankur ; Dey, Siladitya ; Goins, Justin B. ; Fiez, Terri S. ; Mayaram, Kartikeya
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
Volume
50
Issue
8
fYear
2015
fDate
Aug. 2015
Firstpage
1833
Lastpage
1847
Abstract
A new enhanced swing class-D VCO which operates from a supply voltage as low as 300 mV is presented. The architectural advantages are described along with an analysis for the oscillation frequency. Prototype differential and quadrature variants of the proposed VCO have been implemented in a 65 nm RF CMOS process with a 5 GHz VCO oscillation frequency. At a 350 mV supply, the measured phase noise performance for the quadrature VCO with a 5% tuning range is -137.1 dBc/Hz at 3 MHz offset with a power dissipation of 2.1 mW from a 0.35 V supply. The highest resulting figure-of-merit (FoM) is 198.3 dBc/Hz.
Keywords
CMOS analogue integrated circuits; integrated circuit design; integrated circuit noise; microwave integrated circuits; microwave oscillators; noise measurement; phase noise; voltage-controlled oscillators; FoM; RF CMOS process; VCO oscillation frequency; class-D enhanced swing differential VCO; figure-of-merit; frequency 5 GHz; phase noise performance; power 2.1 mW; power dissipation; quadrature VCO; size 65 nm; voltage 350 mV; Couplings; Inductors; MOSFET; Noise; Resonant frequency; Voltage-controlled oscillators; Class-D; differential VCO; enhanced swing; low voltage VCO; oscillators; quadrature VCO; transformer coupling; voltage controlled oscillators;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2015.2420677
Filename
7097098
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