DocumentCode :
47989
Title :
Electrical Stress and Total Ionizing Dose Effects on 
Transistors
Author :
Zhang, C.X. ; Newaz, A.K.M. ; Bin Wang ; En Xia Zhang ; Guo Xing Duan ; Fleetwood, D.M. ; Alles, Michael L. ; Schrimpf, R.D. ; Bolotin, Kirill I. ; Pantelides, Sokrates T.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
2862
Lastpage :
2867
Abstract :
Electrical stress and 10-keV x-ray irradiation and annealing responses are evaluated for back-gate MoS2 transistors. Relative stability of device characteristics is observed for constant-voltage stress. The drain current decreases significantly after both positive and negative bias irradiation. Density functional theory calculations and ozone exposure experiments suggest that O atoms adsorbed on the MoS2 surface during 10-keV x-ray irradiation function as electron traps, causing mobility degradation and voltage shifts.
Keywords :
X-ray effects; annealing; density functional theory; electron traps; field effect transistors; molybdenum compounds; ozone; semiconductor device testing; stress effects; MoS2; O3; X-ray irradiation; annealing responses; back-gate transistors; constant-voltage stress; density functional theory calculations; drain current; electrical stress; electron traps; electron volt energy 10 keV; field effect transistors; ionizing dose effect; mobility degradation; negative bias irradiation; ozone exposure experiments; positive bias irradiation; relative stability; voltage shifts; Annealing; Degradation; Density functional theory; Electron traps; Radiation effects; Thermal stability; ${hbox {MoS}}_{2}$
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2365522
Filename :
6962914
Link To Document :
