DocumentCode :
48083
Title :
Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga2O3 Layer
Author :
Shoou-Jinn Chang ; Chang, T.H. ; Weng, W.Y. ; Chiu, C.J. ; Chang, S.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
20
Issue :
6
fYear :
2014
fDate :
Nov.-Dec. 2014
Firstpage :
125
Lastpage :
129
Abstract :
The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga2O3 layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga2O3 layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μFE) of 13.2 cm2/V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio> 5 × 105. Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 104 and 20, respectively.
Keywords :
amorphous semiconductors; electron mobility; gallium compounds; indium compounds; phototransistors; ternary semiconductors; zinc compounds; Ga2O3; InGaZnO; ON/OFF current ratio; amorphous IGZO; amorphous ultraviolet phototransistors; deep-ultraviolet (UV)-to-visible rejection ratio; electron mobility; near-UV-to-visible rejection ratio; oxygen partial pressure; subthreshold swing; Dielectrics; Educational institutions; Lighting; Logic gates; Microelectronics; Phototransistors; Thin film transistors; Ga2O3; IGZO; phototransistors;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2014.2330604
Filename :
6832459
Link To Document :
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