Title :
SU-8 enhanced high power density MEMS inductors
Author :
Wang, Mingliang ; Ngo, Khai D T ; Xie, Huikai
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL
Abstract :
Monolithic integration of DC-DC converters with on-chip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mOmega has been demonstrated.
Keywords :
CMOS integrated circuits; DC-DC power convertors; inductors; micromechanical devices; monolithic integrated circuits; moulding; windings; CMOS-compatible process; DC-DC converters; SU-8; electroplating layers; high power density MEMS inductors; isolation material; monolithic integration; on-chip inductors; pot-core inductor; silicon molding technique; Copper; DC-DC power converters; Etching; Inductance; Inductors; Magnetic cores; Micromechanical devices; Monolithic integrated circuits; Silicon; Topology;
Conference_Titel :
Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1767-4
Electronic_ISBN :
1553-572X
DOI :
10.1109/IECON.2008.4758379
