• DocumentCode
    481924
  • Title

    High-temperature all-SiC bidirectional DC/DC converter for plug-in-hybrid vehicle (PHEV)

  • Author

    Mazumder, S.K. ; Acharya, K. ; Jedraszczak, Piotr

  • fYear
    2008
  • fDate
    10-13 Nov. 2008
  • Firstpage
    2873
  • Lastpage
    2878
  • Abstract
    We describe an all-SiC 0.25 MHz 5 kW multiphase dc/dc bidirectional boost converter that serves as a charger for the intermediate high-voltage energy storage device (e.g. ultracapacitor) in a plug-in-hybrid vehicle (PHEV). The primary focus of this paper is to report the high-temperature efficiency of the SiC VJFET and SiC Schottky based robust converter and identify the key loss components.
  • Keywords
    DC-DC power convertors; hybrid electric vehicles; junction gate field effect transistors; silicon compounds; Schottky based robust converter; SiC; VJFET; bidirectional DC-DC converter; frequency 0.25 MHz; high-voltage energy storage device; multiphase bidirectional boost converter; plug-in-hybrid vehicle; power 5 kW; ultracapacitor; Batteries; DC-DC power converters; Road vehicles; Schottky diodes; Silicon carbide; Switches; Switching converters; US Department of Energy; Vehicle driving; Voltage; Schottky diode; SiC; VJFET; dc/dc converter; efficiency; plug-in-hybrid vehicle; soft switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1553-572X
  • Print_ISBN
    978-1-4244-1767-4
  • Electronic_ISBN
    1553-572X
  • Type

    conf

  • DOI
    10.1109/IECON.2008.4758415
  • Filename
    4758415