DocumentCode :
48207
Title :
18% Efficiency IBC Cell With Rear-Surface Processed on Quartz
Author :
Dross, Frederic ; O´Sullivan, Barry ; Debucquoy, Maarten ; Bearda, T. ; Govaerts, Jonathan ; Labie, R. ; Loozen, X. ; Granata, S. ; El Daif, Ounsi ; Trompoukis, Christos ; Van Nieuwenhuysen, Kris ; Meuris, Marc ; Gordon, I. ; Posthuma, N. ; Baert, K. ; Po
Author_Institution :
Hanwha Solar America, Santa Clara, CA, USA
Volume :
3
Issue :
2
fYear :
2013
fDate :
Apr-13
Firstpage :
684
Lastpage :
689
Abstract :
In order to relax the mechanical constraints of processing thin crystalline Si wafers into highly efficient solar cells, we propose a process sequence, where a significant part of the process is done on module level. The device structure is an interdigitated-back-contact cell with an amorphous silicon back surface field. The record cell reaches an independently confirmed efficiency of 18.4%. Although the device deserves further optimization, the result shows the compatibility of processing on glass with efficiencies exceeding 18%, which opens the door to a high-efficiency solar cell process where the potentially thin wafer is attached to a foreign carrier during the full processing sequence.
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; IBC cell; Si; SiO2; amorphous silicon back surface field; device structure; efficiency 18 percent; efficiency 18.4 percent; foreign carrier; high-efficiency solar cell process; interdigitated-back-contact cell; mechanical constraints; module level; thin crystalline wafers; Glass; Indium tin oxide; Metallization; Passivation; Photovoltaic cells; Silicon; Crystalline-Si; interdigitated-back-contact (IBC) cells; superstrate processing;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2239359
Filename :
6457404
Link To Document :
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