Title :
18% Efficiency IBC Cell With Rear-Surface Processed on Quartz
Author :
Dross, Frederic ; O´Sullivan, Barry ; Debucquoy, Maarten ; Bearda, T. ; Govaerts, Jonathan ; Labie, R. ; Loozen, X. ; Granata, S. ; El Daif, Ounsi ; Trompoukis, Christos ; Van Nieuwenhuysen, Kris ; Meuris, Marc ; Gordon, I. ; Posthuma, N. ; Baert, K. ; Po
Author_Institution :
Hanwha Solar America, Santa Clara, CA, USA
Abstract :
In order to relax the mechanical constraints of processing thin crystalline Si wafers into highly efficient solar cells, we propose a process sequence, where a significant part of the process is done on module level. The device structure is an interdigitated-back-contact cell with an amorphous silicon back surface field. The record cell reaches an independently confirmed efficiency of 18.4%. Although the device deserves further optimization, the result shows the compatibility of processing on glass with efficiencies exceeding 18%, which opens the door to a high-efficiency solar cell process where the potentially thin wafer is attached to a foreign carrier during the full processing sequence.
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; IBC cell; Si; SiO2; amorphous silicon back surface field; device structure; efficiency 18 percent; efficiency 18.4 percent; foreign carrier; high-efficiency solar cell process; interdigitated-back-contact cell; mechanical constraints; module level; thin crystalline wafers; Glass; Indium tin oxide; Metallization; Passivation; Photovoltaic cells; Silicon; Crystalline-Si; interdigitated-back-contact (IBC) cells; superstrate processing;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2013.2239359