Comparative study of CoolMOS and MOSFET in high frequency circuit design

Author

Hassan, K.N. ; Jelani, N.A. ; Sari´at, S.S. ; Yahaya, N.Z.

Author_Institution

E.E. Dept., Univ. Teknol. Petronas, Tronoh

fYear

2008

fDate

1-3 Dec. 2008

Firstpage

1108

Lastpage

1111

Abstract

The aim of this paper is to compare two high power devices namely CoolMOS and MOSFET in high frequency basic inverter circuit. Where inverter can be used in UPS system, obtaining high quality and efficient AC output at the load requires proper selection of driving power switches. Even though MOSFET has already known for its superior in high frequency operation and high power applications, CoolMOS power device could produce better results in lowering total switching loss in the inverter. The study also looks into the comparison of power losses in the output load from switching activity of both devices during their operating cycles. From the experiment, it can be seen that CoolMOS device can produce higher power saving by at least 82% compared to its counterpart, MOSFET.

Keywords

MOSFET; invertors; network synthesis; switches; uninterruptible power supplies; CoolMOS; MOSFET; UPS system; driving power switches; high frequency circuit design; inverter circuit; Circuit synthesis; Frequency; MOSFET circuits; CoolMOS; High frequency inverter; MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Power and Energy Conference, 2008. PECon 2008. IEEE 2nd International

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-2404-7

Electronic_ISBN

978-1-4244-2405-4

Type

conf

DOI

10.1109/PECON.2008.4762641

Filename

4762641