A method of power loss calculation for RB-IGBT matrix converter

Author

Sun, Kai ; Huang, Lipei

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing

fYear

2008

fDate

17-20 Oct. 2008

Firstpage

1645

Lastpage

1648

Abstract

The calculation and distribution of power losses for RB-IGBT based matrix converter are discussed in this paper. The on-state performance and switching transients of RB-IGBTs are analyzed in detail. According to this analysis, the calculation models of switching losses and conduction loss are established and a power loss calculation method based on the mathematical fit of experimental test data is proposed. Calculation results are presented to validate the proposed method. In addition, this method can also be used for other power converters using RB-IGBT.

Keywords

insulated gate bipolar transistors; losses; matrix convertors; power bipolar transistors; switching convertors; RB-IGBT matrix converter; conduction loss; experimental test data; on-state performance; power loss calculation method; power semiconductor devices; reverse blocking insulated gate bipolar transistors; switching losses; switching transients; Bidirectional control; Insulated gate bipolar transistors; Mathematical model; Matrix converters; Power semiconductor switches; Power system modeling; Power system transients; Prototypes; Switching loss; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Systems, 2008. ICEMS 2008. International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-3826-6

Electronic_ISBN

978-7-5062-9221-4

Type

conf

Filename

4770996