Title :
Impact of the Quantum Well Gain-to-Cavity Etalon Wavelength Offset on the High Temperature Performance of High Bit Rate 980-nm VCSELs
Author :
Hui Li ; Wolf, Philip ; Moser, Philip ; Larisch, Gunter ; Mutig, Alex ; Lott, James A. ; Bimberg, Dieter H.
Author_Institution :
Inst. fur Festkorperphys. und Zentrum fur Nanophotonik, Tech. Univ. Berlin, Berlin, Germany
Abstract :
Highly temperature stable, high bit rate oxide-confined vertical-cavity surface-emitting lasers (VCSELs) emitting at 980 nm are presented. Error-free data transmission at 38 Gb/s at 25 °C, 45 °C, 65 °C, and 85 °C is achieved without any change of working point and modulation condition. Static and high-speed properties are analyzed experimentally and theoretically. We numerically investigate the temperature dependence of the differential gain of our quantum well (QW) active region design to explain why a -15-nm QW gain-to-etalon wavelength offset facilitates our 980-nm VCSELs to show simultaneously high bit rate, temperature stability, and energy efficiency. Our VCSELs operate error-free at 42 and 38 Gb/s at 25 °C and 85 °C, respectively, with very low power consumption. Record low 175 fJ of dissipated heat per bit is achieved for 35-Gb/s error-free transmission at room temperature and 177 fJ/bit for 38-Gb/s error-free transmission at 85 °C. Such VCSELs are especially well suited for very-short-reach (<;1 m) optical interconnects in high-performance computers and board-to-board and chip-to-chip integrated photonics.
Keywords :
high-temperature effects; laser cavity resonators; laser stability; numerical analysis; optical modulation; quantum well lasers; surface emitting lasers; bit rate 35 Gbit/s; bit rate 38 Gbit/s; bit rate 42 Gbit/s; board-to-board integrated photonics; chip-to-chip integrated photonics; differential gain; dissipated heat; energy efficiency; error-free data transmission; high bit rate VCSEL; high temperature performance; high temperature stable high bit rate oxide-confined vertical-cavity surface-emitting lasers; high-performance computers; high-speed properties; modulation condition; power consumption; quantum well active region design; quantum well gain-to-cavity etalon wavelength offset; static properties; temperature 25 degC; temperature 293 K to 298 K; temperature 45 degC; temperature 65 degC; temperature 85 degC; temperature dependence; very-short-reach optical interconnects; wavelength 980 nm; Apertures; Cavity resonators; Gallium arsenide; Strain; Temperature; Temperature measurement; Vertical cavity surface emitting lasers; Temperature-stable; energy-efficiency; high-speed modulation; optical interconnects; quantum well lasers; short-reach fiber optic links; vertical-cavity surface-emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2014.2330255